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EIA JESD 57:1996

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EIA JESD 57:1996

Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

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This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.

Author EIA
Editor EIA
Document type Standard
Format File
ICS 31.080.01 : Semiconductor devices in general
Number of pages 49
Year 1990
Document history
Country USA
Keyword EIA 57;57;EIA JESD57