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Test method to measure the equivalent resistance of the gate to source of a power MOSFET.
Author | EIA |
---|---|
Editor | EIA |
Document type | Standard |
Format | File |
Confirmation date | 2002-10-01 |
ICS | 31.080.01 : Semiconductor devices in general
|
Number of pages | 10 |
Modify | EIA JESD 24 (1985)
|
Year | 1990 |
Document history | |
Country | USA |
Keyword | EIA JESD 24;EIA 24;EIA 24.11;24;EIA JESD24-11 |